IRF7855TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

3.9878mm

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Height :

1.4986mm

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

97A

Rise Time :

13ns

Turn-Off Delay Time :

16 ns

Power Dissipation :

2.5W

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 12A, 10V

Number of Terminations :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Length :

4.9784mm

Turn On Delay Time :

8.7 ns

Power Dissipation-Max :

2.5W Ta

Transistor Application :

SWITCHING

Terminal Position :

Dual

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1560pF @ 25V

Resistance :

9.4mOhm

FET Type :

N-Channel

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Element Configuration :

Single

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current (ID) :

12A

Vgs(th) (Max) @ Id :

4.9V @ 100μA

Avalanche Energy Rating (Eas) :

540 mJ

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Drain to Source Breakdown Voltage :

60V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

12A Ta

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET®

Fall Time (Typ) :

12 ns

Terminal Finish :

Matte Tin (Sn)

Factory Lead Time :

12 Weeks

Published :

2006

Number of Pins :

8

Mount :

Surface Mount