IRF7855PBF
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- Mfr.Part #
- IRF7855PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 12A 8SO
- Stock
- 21,705
- In Stock ：
- 21,705
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Threshold Voltage :
- 4.9V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1560pF @ 25V
- Turn-Off Delay Time :
- 16 ns
- Width :
- 3.9878mm
- Turn On Delay Time :
- 8.7 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- Mount :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 9.4m Ω @ 12A, 10V
- Vgs(th) (Max) @ Id :
- 4.9V @ 100μA
- Length :
- 4.9784mm
- Power Dissipation :
- 97mW
- Element Configuration :
- Single
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Rise Time :
- 13ns
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Published :
- 2005
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 12A
- Power Dissipation-Max :
- 2.5W Ta
- Factory Lead Time :
- 14 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 8
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 39nC @ 10V
- Series :
- HEXFET®
- Height :
- 1.4986mm
- Mounting Type :
- Surface Mount
- Resistance :
- 9.4mOhm
- Drain to Source Breakdown Voltage :
- 60V
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Recovery Time :
- 50 ns
- Fall Time (Typ) :
- 12 ns
- Datasheets
- IRF7855PBF
N-Channel Tube 9.4m Ω @ 12A, 10V ±20V 1560pF @ 25V 39nC @ 10V 8-SOIC (0.154, 3.90mm Width)
IRF7855PBF Overview
A device's maximal input capacitance is 1560pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 16 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4.9V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).
IRF7855PBF Features
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 16 ns
a threshold voltage of 4.9V
IRF7855PBF Applications
There are a lot of Infineon Technologies
IRF7855PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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