IRF7854TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

1.4986mm

Turn-Off Delay Time :

15 ns

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1620pF @ 25V

Lead Free :

Lead Free

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4.9V @ 100μA

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Continuous Drain Current (ID) :

10A

Turn On Delay Time :

9.4 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

MATTE TIN

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

13.4m Ω @ 10A, 10V

Length :

4.9784mm

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation-Max :

2.5W Ta

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

80V

Rise Time :

8.5ns

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

30

Pulsed Drain Current-Max (IDM) :

79A

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Fall Time (Typ) :

8.6 ns

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

12 Weeks

Number of Terminations :

8

Transistor Element Material :

SILICON

Power Dissipation :

2.5W

Published :

2006

Mounting Type :

Surface Mount

Width :

3.9878mm

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Terminal Position :

Dual