IRF7854PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Power Dissipation-Max :

2.5W Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

4.9 V

Lead Free :

Lead Free

Turn-Off Delay Time :

15 ns

Supplier Device Package :

8-SO

Dual Supply Voltage :

80V

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

10A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

10A

Recovery Time :

65 ns

Rds On Max :

13.4 mΩ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Resistance :

13.4MOhm

Packaging :

Tube

Input Capacitance :

1.62nF

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

13.4mOhm @ 10A, 10V

Drain to Source Voltage (Vdss) :

80V

REACH SVHC :

No SVHC

Height :

1.4986mm

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

4.9V

Turn On Delay Time :

9.4 ns

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4.9V @ 100μA

Width :

3.9878mm

Published :

2006

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Drain to Source Resistance :

13.4MOhm

Length :

4.9784mm

Max Operating Temperature :

150°C

Series :

HEXFET®

RoHS Status :

RoHS Compliant

FET Type :

N-Channel

Rise Time :

8.5ns

Fall Time (Typ) :

8.6 ns

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

80V

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1620pF @ 25V

Max Output Current :

2.5A

Operating Temperature :

-55°C~150°C TJ