IRF7853TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

2.5W

Length :

4.9784mm

Terminal Form :

Gull wing

Continuous Drain Current (ID) :

8.3A

Pulsed Drain Current-Max (IDM) :

66A

Rise Time :

6.6ns

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Terminal Position :

Dual

REACH SVHC :

Unknown

Transistor Application :

SWITCHING

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

26 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4.9V @ 100μA

Lead Free :

Lead Free

Height :

1.4986mm

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

6 ns

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

100V

FET Type :

N-Channel

Turn On Delay Time :

13 ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Series :

HEXFET®

Power Dissipation-Max :

2.5W Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mounting Type :

Surface Mount

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

18m Ω @ 8.3A, 10V

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Vgs (Max) :

±20V

Width :

3.9878mm

Published :

2006

Radiation Hardening :

No

Resistance :

18mOhm

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 25V