IRF7853PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.4986mm

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Input Capacitance (Ciss) (Max) @ Vds :

1640pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Resistance :

18mOhm

Continuous Drain Current (ID) :

8.3A

Fall Time (Typ) :

6 ns

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Nominal Vgs :

4.9 V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

18m Ω @ 8.3A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Published :

2006

Drain to Source Breakdown Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

3.9878mm

Dual Supply Voltage :

100V

Turn-Off Delay Time :

26 ns

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4.9V @ 100μA

Radiation Hardening :

No

Termination :

SMD/SMT

Threshold Voltage :

4.9V

Series :

HEXFET®

Rise Time :

6.6ns

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Ta

Recovery Time :

68 ns

Mount :

Surface Mount

ECCN Code :

EAR99

Power Dissipation :

2.5W

FET Type :

N-Channel

Length :

4.9784mm

Vgs (Max) :

±20V

Number of Elements :

1

Element Configuration :

Single

Turn On Delay Time :

13 ns