IRF7842TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Power Dissipation-Max :

2.5W Ta

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.005ohm

Current - Continuous Drain (Id) @ 25°C :

18A Ta

JEDEC-95 Code :

MS-012AA

Number of Terminations :

8

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

RoHS Status :

Non-RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

4500pF @ 20V

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

5m Ω @ 17A, 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Drain to Source Voltage (Vdss) :

40V

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 4.5V

JESD-30 Code :

R-PDSO-G8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

FET Type :

N-Channel

Published :

2004

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

18A

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

40V

Number of Elements :

1

Packaging :

Tape and Reel (TR)