IRF7842PBF
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- Mfr.Part #
- IRF7842PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 18A 8SO
- Stock
- 23,611
- In Stock ：
- 23,611
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- HEXFET®
- FET Type :
- N-Channel
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 18A Ta
- Power Dissipation-Max :
- 2.5W Ta
- Drain to Source Voltage (Vdss) :
- 40V
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 50nC @ 4.5V
- Vgs(th) (Max) @ Id :
- 2.25V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 4500pF @ 20V
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 5m Ω @ 17A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2004
- Datasheets
- IRF7842PBF
N-Channel Tube 5m Ω @ 17A, 10V ±20V 4500pF @ 20V 50nC @ 4.5V 40V 8-SOIC (0.154, 3.90mm Width)
IRF7842PBF Description
IRF7842PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a drain to source voltage of 40V. The operating temperature of the IRF7842PBF is -55??C~150??C TJ and its maximum power dissipation is 2.5W Ta. IRF7842PBF has 8 pins and it is available in Tube packaging way.
IRF7842PBF Features
-
Very Low RDS(on) at 4.5V VGS
-
Low Gate Charge
-
Fully Characterized Avalanche Voltage and Current
IRF7842PBF Applications
-
Synchronous MOSFET for Notebook Processor Power
-
Secondary Synchronous Rectification for Isolated DC-DC Converters
-
Synchronous Fet for Non-Isolated DC-DC Converters
-
Lead-Free
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