IRF7834PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

30V

Rise Time :

14.3ns

Current - Continuous Drain (Id) @ 25°C :

19A Ta

Number of Terminations :

8

Lead Free :

Lead Free

Nominal Vgs :

2.25 V

Power Dissipation :

2.5W

Turn On Delay Time :

13.7 ns

Input Capacitance (Ciss) (Max) @ Vds :

3710pF @ 15V

Factory Lead Time :

15 Weeks

Terminal Position :

Dual

Drain-source On Resistance-Max :

0.0045ohm

Avalanche Energy Rating (Eas) :

25 mJ

Turn-Off Delay Time :

18 ns

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Continuous Drain Current (ID) :

19A

Current Rating :

19A

Published :

2004

Vgs (Max) :

±20V

Fall Time (Typ) :

5 ns

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 19A, 10V

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Voltage - Rated DC :

30V

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Element Material :

SILICON

Number of Elements :

1

Height :

1.4986mm

Terminal Form :

Gull wing

Packaging :

Tube

Length :

4.9784mm

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Power Dissipation-Max :

2.5W Ta

Width :

3.9878mm

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

FET Type :

N-Channel

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V