IRF7834

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

19A Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Series :

HEXFET®

Surface Mount :

yes

Transistor Element Material :

SILICON

Terminal Finish :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

25 mJ

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

JEDEC-95 Code :

MS-012AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

3710pF @ 15V

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

160A

Power Dissipation-Max :

2.5W Ta

Drain Current-Max (Abs) (ID) :

19A

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0045ohm

Published :

2004

JESD-30 Code :

R-PDSO-G8

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 19A, 10V

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

30V

Number of Terminations :

8

DS Breakdown Voltage-Min :

30V

Mounting Type :

Surface Mount