IRF7832Z
- Mfr.Part #
- IRF7832Z
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 21A 8SO
- Stock
- 16,219
- In Stock :
- 16,219
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 2.35V @ 250μA
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3860pF @ 15V
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 20A, 10V
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2005
- RoHS Status :
- Non-RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 30V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 2.5W Ta
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Datasheets
- IRF7832Z

N-Channel Tube 3.8m Ω @ 20A, 10V ±20V 3860pF @ 15V 45nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7832Z Description
IRF7832Z is a type of HEXFET power MOSFET provided by Infineon Technologies. It is characterized by ultra-low gate impedance, fully characterized avalanche voltage and current, and very low RDS(on) at 4.5V VGS. Based on its specific characteristics, it is ideally suitable for synchronous MOSFET for notebook processor power and synchronous rectifier MOSFET for isolated DC-DC converters.
IRF7832Z Features
Ultra-low gate impedance
Fully characterized avalanche voltage and current
20V VGS Max. gate rating
100% tested for Rg
Very low RDS(on) at 4.5V VGS
IRF7832Z Applications
Synchronous MOSFET for notebook processor power
Synchronous rectifier MOSFET for isolated DC-DC converters
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