IRF7832TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

30V

Factory Lead Time :

12 Weeks

Power Dissipation :

2.5W

Termination :

SMD/SMT

Voltage - Rated DC :

30V

Turn-Off Delay Time :

21 ns

Mount :

Surface Mount

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Number of Pins :

8

Turn On Delay Time :

12 ns

Number of Channels :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Width :

3.9878mm

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Resistance :

4mOhm

Row Spacing :

6.3 mm

Transistor Application :

SWITCHING

Height :

1.75mm

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.32V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

20A

Nominal Vgs :

2.32 V

Contact Plating :

Tin

Fall Time (Typ) :

13 ns

Current Rating :

20A

Dual Supply Voltage :

30V

Threshold Voltage :

2.32V

Input Capacitance (Ciss) (Max) @ Vds :

4310pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Rds On (Max) @ Id, Vgs :

4m Ω @ 20A, 10V

ECCN Code :

EAR99

Operating Temperature :

-55°C~155°C TJ

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

260 mJ

Recovery Time :

62 ns

Lead Free :

Contains Lead, Lead Free

Series :

HEXFET®

Length :

4.9784mm

Power Dissipation-Max :

2.5W Ta

Max Junction Temperature (Tj) :

155°C

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Published :

2005

Number of Terminations :

8

Rise Time :

6.7ns

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 4.5V

REACH SVHC :

No SVHC