IRF7831TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Number of Terminations :

8

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

Vgs (Max) :

±12V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 20A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain Current-Max (Abs) (ID) :

21A

Published :

2005

JESD-30 Code :

R-PDSO-G8

Power Dissipation-Max :

2.5W Ta

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

6240pF @ 15V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

JEDEC-95 Code :

MS-012AA

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2.35V @ 250μA

RoHS Status :

Non-RoHS Compliant

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

100 mJ

Current - Continuous Drain (Id) @ 25°C :

21A Ta

Pulsed Drain Current-Max (IDM) :

170A

DS Breakdown Voltage-Min :

30V

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0036Ohm