IRF7831PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 20A, 10V

Vgs (Max) :

±12V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 4.5V

Terminal Position :

Dual

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

100 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Terminations :

8

Packaging :

Tube

Vgs(th) (Max) @ Id :

2.35V @ 250μA

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

21A

Transistor Element Material :

SILICON

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

MS-012AA

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

2.5W Ta

Factory Lead Time :

14 Weeks

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G8

Mounting Type :

Surface Mount

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

170A

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0036Ohm

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

6240pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

21A Ta