IRF7828TRPBF
- Mfr.Part #
- IRF7828TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13.6A 8SO
- Stock
- 51,779
- In Stock :
- 51,779
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Operating Temperature :
- 150°C
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 13.6A Ta
- Power Dissipation :
- 2.5W
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Mount :
- Surface Mount
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 4.9784mm
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 5V
- Supplier Device Package :
- 8-SO
- Mounting Type :
- Surface Mount
- Number of Pins :
- 8
- FET Type :
- N-Channel
- Width :
- 3.9878mm
- Drain to Source Voltage (Vdss) :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 2.7ns
- Fall Time (Typ) :
- 7.3 ns
- Power Dissipation-Max :
- 2.5W Ta
- Rds On Max :
- 12.5 mΩ
- Continuous Drain Current (ID) :
- 13.6A
- Input Capacitance :
- 1.01nF
- Turn On Delay Time :
- 6.3 ns
- Series :
- HEXFET®
- Input Capacitance (Ciss) (Max) @ Vds :
- 1010pF @ 15V
- Min Operating Temperature :
- -55°C
- Rds On (Max) @ Id, Vgs :
- 12.5mOhm @ 10A, 4.5V
- Vgs (Max) :
- ±20V
- Height :
- 1.4986mm
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 9.7 ns
- Drain to Source Breakdown Voltage :
- 30V
- Drain to Source Resistance :
- 12.5mOhm
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2007
- Datasheets
- IRF7828TRPBF

N-Channel Tape & Reel (TR) 12.5mOhm @ 10A, 4.5V ±20V 1010pF @ 15V 14nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7828TRPBF Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1010pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 13.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 9.7 ns.This device has a drain-to-source resistance of 12.5mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.3 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V), this device contributes to a reduction in overall power consumption.
IRF7828TRPBF Features
a continuous drain current (ID) of 13.6A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 9.7 ns
single MOSFETs transistor is 12.5mOhm
a 30V drain to source voltage (Vdss)
IRF7828TRPBF Applications
There are a lot of Infineon Technologies
IRF7828TRPBF applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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