IRF7828PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

4.9784mm

Supplier Device Package :

8-SO

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

12.5mOhm @ 10A, 4.5V

Drain to Source Resistance :

12.5mOhm

Height :

1.4986mm

Series :

HEXFET®

Max Operating Temperature :

150°C

Number of Elements :

1

Min Operating Temperature :

-55°C

Lead Free :

Lead Free

Number of Pins :

8

Power Dissipation :

2.5W

Row Spacing :

6.3 mm

Nominal Vgs :

1 V

Mounting Type :

Surface Mount

Turn-Off Delay Time :

9.7 ns

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 15V

Turn On Delay Time :

6.3 ns

Published :

2006

Vgs(th) (Max) @ Id :

1V @ 250μA

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Radiation Hardening :

No

Continuous Drain Current (ID) :

13.6A

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V

Rds On Max :

12.5 mΩ

Gate to Source Voltage (Vgs) :

20V

Drain to Source Voltage (Vdss) :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Fall Time (Typ) :

7.3 ns

Termination :

SMD/SMT

Dual Supply Voltage :

30V

Threshold Voltage :

1V

Voltage - Rated DC :

30V

Drain to Source Breakdown Voltage :

30V

Input Capacitance :

1.01nF

Current - Continuous Drain (Id) @ 25°C :

13.6A Ta

REACH SVHC :

No SVHC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Rise Time :

2.7ns

Width :

4.05mm

Power Dissipation-Max :

2.5W Ta

Current Rating :

13.6A

RoHS Status :

RoHS Compliant