IRF7822TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance :

5.5nF

Continuous Drain Current (ID) :

18A

Mount :

Surface Mount

Power Dissipation-Max :

3.1W Ta

Current Rating :

18A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Min Operating Temperature :

-55°C

Turn On Delay Time :

15 ns

Vgs (Max) :

±12V

Published :

2004

Number of Elements :

1

Rds On Max :

6.5 mΩ

Drain to Source Resistance :

6.5mOhm

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 16V

Fall Time (Typ) :

12 ns

Turn-Off Delay Time :

22 ns

Mounting Type :

Surface Mount

Series :

HEXFET®

Radiation Hardening :

No

Drain to Source Breakdown Voltage :

30V

Gate to Source Voltage (Vgs) :

12V

Resistance :

6.5mOhm

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

3.1W

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Max Operating Temperature :

150°C

Voltage - Rated DC :

30V

Supplier Device Package :

8-SO

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Rise Time :

5.5ns

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 15A, 4.5V

Operating Temperature :

-55°C~150°C TJ

FET Type :

N-Channel

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant