IRF7822PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

15 ns

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

8-SO

Published :

2001

Fall Time (Typ) :

12 ns

Number of Pins :

8

Rds On Max :

6.5 mΩ

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

12V

Nominal Vgs :

1 V

Length :

4.9784mm

Input Capacitance (Ciss) (Max) @ Vds :

5500pF @ 16V

Series :

HEXFET®

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Power Dissipation :

3.1W

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Mount :

Surface Mount

Max Operating Temperature :

150°C

Drain to Source Resistance :

6.5mOhm

Current - Continuous Drain (Id) @ 25°C :

18A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

18A

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Height :

1.4986mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

RoHS Compliant

Width :

3.9878mm

FET Type :

N-Channel

Rise Time :

5.5ns

Turn-Off Delay Time :

22 ns

Input Capacitance :

5.5nF

Rds On (Max) @ Id, Vgs :

6.5mOhm @ 15A, 4.5V

Power Dissipation-Max :

3.1W Ta

Vgs (Max) :

±12V

Threshold Voltage :

1V

Packaging :

Tube

Dual Supply Voltage :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Continuous Drain Current (ID) :

18A

Vgs(th) (Max) @ Id :

1V @ 250μA

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

30V

Row Spacing :

6.3 mm

Voltage - Rated DC :

30V