IRF7821TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

2.7ns

REACH SVHC :

No SVHC

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Number of Channels :

1

Recovery Time :

42 ns

Avalanche Energy Rating (Eas) :

44 mJ

Nominal Vgs :

1 V

Width :

3.9878mm

Height :

1.75mm

Mounting Type :

Surface Mount

Lead Free :

Contains Lead, Lead Free

Row Spacing :

6.3 mm

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

9.7 ns

Dual Supply Voltage :

30V

Number of Elements :

1

Turn On Delay Time :

6.3 ns

Terminal Position :

Dual

Series :

HEXFET®

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

1V @ 250μA

Voltage - Rated DC :

30V

Termination :

SMD/SMT

JESD-609 Code :

e3

Max Junction Temperature (Tj) :

155°C

Drain to Source Breakdown Voltage :

30V

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 15V

Threshold Voltage :

1V

Power Dissipation-Max :

2.5W Ta

Factory Lead Time :

12 Weeks

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Element Configuration :

Single

Mount :

Surface Mount

Length :

4.9784mm

Number of Pins :

8

Fall Time (Typ) :

7.3 ns

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Resistance :

9.1MOhm

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~155°C TJ

Number of Terminations :

8

Rds On (Max) @ Id, Vgs :

9.1m Ω @ 13A, 10V

Terminal Form :

Gull wing

Current Rating :

13.6A

Current - Continuous Drain (Id) @ 25°C :

13.6A Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

13.6A

Power Dissipation :

2.5W

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2007

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate to Source Voltage (Vgs) :

20V