IRF7821TRPBF-1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Vgs(th) (Max) @ Id :

1V @ 250μA

Technology :

MOSFET (Metal Oxide)

Power Dissipation-Max (Abs) :

2.5 W

Vgs (Max) :

±20V

Power Dissipation (Max) :

2.5W (Ta)

Drain to Source Voltage (Vdss) :

30 V

Gate Charge (Qg) (Max) @ Vgs :

14 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

1010 pF @ 15 V

Package :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

13.6A (Ta)

Drain Current-Max (Abs) (ID) :

13.6 A

Series :

HEXFET®

Surface Mount :

yes

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Product Status :

Obsolete

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Subcategory :

FET General Purpose Power

Reach Compliance Code :

Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

Single

FET Feature :

-

Supplier Device Package :

8-SOIC

Operating Temperature :

-55°C ~ 155°C (TJ)

Mounting Type :

Surface Mount

Manufacturer :

Infineon Technologies AG

Rds On (Max) @ Id, Vgs :

9.1mOhm @ 13A, 10V

Polarity/Channel Type :

N-Channel