IRF7821TR
- Mfr.Part #
- IRF7821TR
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13.6A 8SO
- Stock
- 124,432
- In Stock :
- 124,432
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Number of Terminations :
- 8
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Row Spacing :
- 6.3 mm
- Dual Supply Voltage :
- 30V
- Fall Time (Typ) :
- 7.3 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 2.5W Ta
- Resistance :
- 9.1MOhm
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Terminal Form :
- Gull wing
- Published :
- 2007
- Termination :
- SMD/SMT
- Power Dissipation :
- 2.5W
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- RoHS Status :
- ROHS3 Compliant
- Voltage - Rated DC :
- 30V
- Nominal Vgs :
- 1 V
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 13A, 10V
- Radiation Hardening :
- No
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 2.7ns
- Continuous Drain Current (ID) :
- 13.6A
- Current - Continuous Drain (Id) @ 25°C :
- 13.6A Ta
- Number of Pins :
- 8
- Avalanche Energy Rating (Eas) :
- 44 mJ
- Lead Free :
- Contains Lead, Lead Free
- Height :
- 1.75mm
- Contact Plating :
- Tin
- Threshold Voltage :
- 1V
- Turn On Delay Time :
- 6.3 ns
- FET Type :
- N-Channel
- Max Junction Temperature (Tj) :
- 155°C
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 9.7 ns
- Operating Temperature :
- -55°C~155°C TJ
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 12 Weeks
- Number of Channels :
- 1
- Drain to Source Breakdown Voltage :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 13.6A
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 3.9878mm
- REACH SVHC :
- No SVHC
- Length :
- 4.9784mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1010pF @ 15V
- Mount :
- Surface Mount
- Recovery Time :
- 42 ns
- Number of Elements :
- 1
- Series :
- HEXFET®
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- IRF7821TR

N-Channel Tape & Reel (TR) 9.1m Ω @ 13A, 10V ±20V 1010pF @ 15V 14nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
IRF7821TRPBF Description
IRF7821TRPBF is a 30v Single N-Channel HEXFET Power MOSFET. The Infineon IRF7821TRPBF features High-Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. The Operating and Storage Temperature Range is between -55 and 155℃. And the Transistor IRF7821TRPBF is in the SOIC-8 package with 2.5W power dissipation.
IRF7821TRPBF Features
-
RoHS Compliant
-
Industry-leading quality
-
Low RDS(ON) at 4.5V VGS
-
Fully Characterized Avalanche Voltage and Current
-
Ultra-Low Gate Impedance
IRF7821TRPBF Applications
-
Networking
-
Computing Systems
-
Enterprise machine
-
Enterprise projectors
-
Wired networking
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