IRF7821PBF
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- Mfr.Part #
- IRF7821PBF
- Manufacturer
- International Rectifier
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- HEXFET POWER MOSFET
- Stock
- 39,886
- In Stock ：
- 39,886
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2004
- Rds On (Max) @ Id, Vgs :
- 9.1m Ω @ 13A, 10V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- N-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Series :
- HEXFET®
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Current - Continuous Drain (Id) @ 25°C :
- 13.6A Ta
- Mounting Type :
- Surface Mount
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Power Dissipation-Max :
- 2.5W Ta
- Operating Temperature :
- -55°C~155°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1010pF @ 15V
- Datasheets
- IRF7821PBF
N-Channel Tube 9.1m Ω @ 13A, 10V ±20V 1010pF @ 15V 14nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7821PBF Description
IRF7821PBF is an N-channel Power MOSFET transistor from the manufacturer Infineon Technologies with a voltage of 30V. The operating temperature of the IRF7821PBF is -55??C~155??C TJ and its maximum power dissipation is 2.5W Ta. IRF7821PBF has 8 pins and it is available in Tube packaging way. The Drain to Source Voltage (Vdss) of IRF7821PBF is 30V.
IRF7821PBF Features
-
Very Low RDS(on) at 4.5V VGS
-
Low Gate Charge
-
Fully Characterized Avalanche Voltage and Current
IRF7821PBF Applications
-
High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems.
-
Lead-Free
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