IRF7821GTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On Max :

9.1 mΩ

Width :

3.9878mm

Drain to Source Resistance :

9.1MOhm

Number of Pins :

8

Power Dissipation-Max :

2.5W Ta

Mount :

Surface Mount

Height :

1.4986mm

Supplier Device Package :

8-SO

Vgs (Max) :

±20V

Turn On Delay Time :

6.3 ns

Published :

2009

Drain to Source Voltage (Vdss) :

30V

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Rise Time :

2.7ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Fall Time (Typ) :

7.3 ns

Length :

4.9784mm

Series :

HEXFET®

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

13.6A Ta

Input Capacitance :

1.01nF

Radiation Hardening :

No

Element Configuration :

Single

Turn-Off Delay Time :

9.7 ns

Continuous Drain Current (ID) :

13.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

155°C

REACH SVHC :

No SVHC

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~155°C TJ

Nominal Vgs :

1 V

Power Dissipation :

2.5W

Rds On (Max) @ Id, Vgs :

9.1mOhm @ 13A, 10V

RoHS Status :

RoHS Compliant

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1010pF @ 15V

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Drain to Source Breakdown Voltage :

30V