IRF7820TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

200V

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Factory Lead Time :

12 Weeks

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

3.7A

Power Dissipation-Max :

2.5W Ta

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Threshold Voltage :

4V

Series :

HEXFET®

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1750pF @ 100V

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Packaging :

Tape and Reel (TR)

Rise Time :

3.2ns

Drain to Source Voltage (Vdss) :

200V

Nominal Vgs :

4 V

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

8

Number of Elements :

1

Vgs (Max) :

±20V

Power Dissipation :

2.5W

Terminal Position :

Dual

Mounting Type :

Surface Mount

Turn-Off Delay Time :

14 ns

Published :

2012

Vgs(th) (Max) @ Id :

5V @ 100µA

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Turn On Delay Time :

7.1 ns

FET Type :

N-Channel

Number of Pins :

8

Fall Time (Typ) :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

Rds On (Max) @ Id, Vgs :

78m Ω @ 2.2A, 10V

Package / Case :

8-SOIC (0.154, 3.90mm Width)