IRF7815PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

5.1A Ta

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta

Number of Pins :

8

Height :

1.4986mm

Rise Time :

3.2ns

Rds On (Max) @ Id, Vgs :

43m Ω @ 3.1A, 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

JESD-30 Code :

R-PDSO-G3

Continuous Drain Current (ID) :

5.1A

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

150V

Length :

4.9784mm

REACH SVHC :

No SVHC

Width :

3.9878mm

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

4 V

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

1647pF @ 75V

Recovery Time :

62 ns

Terminal Form :

Gull wing

Turn On Delay Time :

8.4 ns

Terminal Position :

Dual

Fall Time (Typ) :

8.3 ns

Turn-Off Delay Time :

14 ns

Avalanche Energy Rating (Eas) :

529 mJ

Drain-source On Resistance-Max :

0.043Ohm

Threshold Voltage :

4V

Number of Elements :

1

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 100µA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±20V

Case Connection :

DRAIN

ECCN Code :

EAR99

Element Configuration :

Single

Published :

2009

Power Dissipation :

2.5W