IRF7811WTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Turn On Delay Time :

11 ns

Mounting Type :

Surface Mount

Current Rating :

14A

Drain to Source Voltage (Vdss) :

30V

Vgs (Max) :

±12V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2335pF @ 16V

Height :

1.4986mm

Fall Time (Typ) :

9.9 ns

Lead Free :

Lead Free

Number of Pins :

8

Published :

2009

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.9878mm

Gate to Source Voltage (Vgs) :

12V

Drain to Source Breakdown Voltage :

30V

Length :

4.9784mm

Series :

HEXFET®

Rds On Max :

12 mΩ

Continuous Drain Current (ID) :

14A

Min Operating Temperature :

-55°C

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Rise Time :

11ns

FET Type :

N-Channel

Power Dissipation-Max :

3.1W Ta

Rds On (Max) @ Id, Vgs :

12mOhm @ 15A, 4.5V

Mount :

Surface Mount

Radiation Hardening :

No

Supplier Device Package :

8-SO

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Power Dissipation :

1W

Turn-Off Delay Time :

29 ns

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

Number of Elements :

1

Drain to Source Resistance :

12mOhm

Voltage - Rated DC :

30V

Input Capacitance :

2.335nF