IRF7811WGTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.1W Ta

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 5V

Supplier Device Package :

8-SO

Rds On (Max) @ Id, Vgs :

12mOhm @ 15A, 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

2335pF @ 16V

Continuous Drain Current (ID) :

14A

RoHS Status :

RoHS Compliant

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Mounting Type :

Surface Mount

Input Capacitance :

2.335nF

FET Type :

N-Channel

Published :

2009

Gate to Source Voltage (Vgs) :

12V

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA

Series :

HEXFET®

Vgs (Max) :

±12V

Rds On Max :

12 mΩ

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Number of Pins :

8

Power Dissipation :

3.1W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Current - Continuous Drain (Id) @ 25°C :

14A Ta