IRF7811AVTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Resistance :

14mOhm

Vgs (Max) :

±20V

Length :

4.9784mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Radiation Hardening :

No

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Threshold Voltage :

3V

Turn On Delay Time :

8.6 ns

Drain to Source Breakdown Voltage :

30V

Element Configuration :

Single

Height :

1.4986mm

Rds On (Max) @ Id, Vgs :

14m Ω @ 15A, 4.5V

Peak Reflow Temperature (Cel) :

260

Width :

3.9878mm

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Current Rating :

10.8A

Turn-Off Delay Time :

43 ns

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

10.8A Ta

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 5V

Transistor Element Material :

SILICON

Number of Pins :

8

Vgs(th) (Max) @ Id :

3V @ 250µA

Rise Time :

21ns

Mount :

Surface Mount

Continuous Drain Current (ID) :

10.8A

Published :

2004

Lead Free :

Lead Free

FET Type :

N-Channel

Contact Plating :

Tin

Factory Lead Time :

12 Weeks

Number of Elements :

1

Voltage - Rated DC :

30V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Power Dissipation :

2.5W

Nominal Vgs :

3 V

Input Capacitance (Ciss) (Max) @ Vds :

1801pF @ 10V

Gate to Source Voltage (Vgs) :

20V

Fall Time (Typ) :

10 ns

Power Dissipation-Max :

2.5W Ta