IRF7811A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

JESD-609 Code :

e3

Series :

HEXFET®

JEDEC-95 Code :

MS-012AA

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 4.5V

Drain to Source Voltage (Vdss) :

28V

Power Dissipation-Max :

2.5W Ta

Drain Current-Max (Abs) (ID) :

10.8A

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

JESD-30 Code :

R-PDSO-G8

Input Capacitance (Ciss) (Max) @ Vds :

1760pF @ 15V

Terminal Position :

Dual

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Published :

2007

Rds On (Max) @ Id, Vgs :

10m Ω @ 11A, 10V

HTS Code :

8541.29.00.95

Vgs (Max) :

±12V

Number of Terminations :

8