IRF7811

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

JESD-30 Code :

R-PDSO-G8

Terminal Position :

Dual

HTS Code :

8541.29.00.95

Packaging :

Tube

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JEDEC-95 Code :

MS-012AA

Drain to Source Voltage (Vdss) :

28V

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 16V

Vgs(th) (Max) @ Id :

1V @ 250μA

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

FET Type :

N-Channel

Qualification Status :

Not Qualified

Drain Current-Max (Abs) (ID) :

10.8A

RoHS Status :

Non-RoHS Compliant

Rds On (Max) @ Id, Vgs :

11m Ω @ 15A, 4.5V

Number of Elements :

1

Power Dissipation-Max :

3.5W Ta

Terminal Finish :

Matte Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

14A Ta

Number of Terminations :

8

Operating Temperature (Min) :

-55°C

Transistor Element Material :

SILICON

Operating Temperature (Max) :

150°C

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V