IRF7809AVTRPBF
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- Mfr.Part #
- IRF7809AVTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 13.3A 8SO
- Stock
- 69
- In Stock ：
- 69
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Length :
- 4.9784mm
- Lead Free :
- Contains Lead, Lead Free
- Turn-Off Delay Time :
- 96 ns
- Power Dissipation :
- 2.5W
- Published :
- 2005
- Number of Pins :
- 8
- Series :
- HEXFET®
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 13.3A
- Fall Time (Typ) :
- 10 ns
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 13.3A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 3780pF @ 16V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 13.3A
- Vgs (Max) :
- ±12V
- Threshold Voltage :
- 1V
- Height :
- 1.4986mm
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 5V
- Row Spacing :
- 6.3 mm
- Resistance :
- 9mOhm
- Radiation Hardening :
- No
- Number of Terminations :
- 8
- Transistor Application :
- SWITCHING
- Nominal Vgs :
- 1 V
- Power Dissipation-Max :
- 2.5W Ta
- Element Configuration :
- Single
- Factory Lead Time :
- 12 Weeks
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Dual Supply Voltage :
- 30V
- Width :
- 3.9878mm
- Drain to Source Breakdown Voltage :
- 30V
- Rds On (Max) @ Id, Vgs :
- 9m Ω @ 15A, 4.5V
- Rise Time :
- 36ns
- Operating Mode :
- ENHANCEMENT MODE
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 14 ns
- Voltage - Rated DC :
- 30V
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Gate to Source Voltage (Vgs) :
- 12V
- Contact Plating :
- Tin
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Datasheets
- IRF7809AVTRPBF
N-Channel Tape & Reel (TR) 9m Ω @ 15A, 4.5V ±12V 3780pF @ 16V 62nC @ 5V 8-SOIC (0.154, 3.90mm Width)
IRF7809AVTRPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 3780pF @ 16V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 13.3A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [96 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 14 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V).
IRF7809AVTRPBF Features
a continuous drain current (ID) of 13.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 96 ns
a threshold voltage of 1V
IRF7809AVTRPBF Applications
There are a lot of Infineon Technologies
IRF7809AVTRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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