IRF7809AVTRPBF-1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Package :

Tape and Reel (TR)

JEDEC-95 Code :

MS-012AA

Package / Case :

8-SOIC (0.154", 3.90mm Width)

Rds On (Max) @ Id, Vgs :

9mOhm @ 15A, 4.5V

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

13.3A (Ta)

Operating Mode :

ENHANCEMENT MODE

Series :

HEXFET?

Power Dissipation-Max (Abs) :

3 W

Package Shape :

RECTANGULAR

Number of Terminals :

8

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

30 V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30 V

Terminal Form :

Gull wing

Vgs (Max) :

±12V

FET Feature :

-

Feedback Cap-Max (Crss) :

130 pF

Manufacturer :

Infineon Technologies AG

JESD-30 Code :

R-PDSO-G8

Pulsed Drain Current-Max (IDM) :

100 A

Power Dissipation Ambient-Max :

2.5 W

Product Status :

Obsolete

Operating Temperature :

-55°C ~ 150°C (TJ)

Drive Voltage (Max Rds On, Min Rds On) :

4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Supplier Device Package :

8-SOIC

Gate Charge (Qg) (Max) @ Vgs :

62 nC @ 5 V

Reach Compliance Code :

Compliant

Drain Current-Max (Abs) (ID) :

13.3 A

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

3780 pF @ 16 V

Power Dissipation (Max) :

2.5W (Ta)

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain-source On Resistance-Max :

0.009 Ω

Surface Mount :

yes