IRF7809AV

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Surface Mount :

yes

Transistor Application :

SWITCHING

Packaging :

Tube

Drain-source On Resistance-Max :

0.009Ohm

Input Capacitance (Ciss) (Max) @ Vds :

3780pF @ 16V

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

HEXFET®

Number of Elements :

1

Peak Reflow Temperature (Cel) :

245

Rds On (Max) @ Id, Vgs :

9m Ω @ 15A, 4.5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Position :

Dual

Power Dissipation-Max :

2.5W Ta

Mounting Type :

Surface Mount

Vgs (Max) :

±12V

Number of Terminations :

8

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

JEDEC-95 Code :

MS-012AA

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Published :

2005

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

100A

Vgs(th) (Max) @ Id :

1V @ 250μA

DS Breakdown Voltage-Min :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Drain Current-Max (Abs) (ID) :

13.3A

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 5V

JESD-30 Code :

R-PDSO-G8

Current - Continuous Drain (Id) @ 25°C :

13.3A Ta

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

HTS Code :

8541.29.00.95

Qualification Status :

Not Qualified