IRF7809A

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±12V

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Transistor Application :

SWITCHING

Terminal Position :

Dual

Packaging :

Tube

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

13.3A

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON

JESD-30 Code :

R-PDSO-G8

Input Capacitance (Ciss) (Max) @ Vds :

7300pF @ 16V

Power Dissipation-Max :

2.5W Ta

Operating Temperature (Max) :

150°C

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

N-Channel

Number of Terminations :

8

Drain-source On Resistance-Max :

0.009Ohm

Rds On (Max) @ Id, Vgs :

8.5m Ω @ 15A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

14.5A Ta

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 5V

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

100A