IRF7807ZTRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Radiation Hardening :

No

Nominal Vgs :

1.8 V

Terminal Form :

Gull wing

Width :

3.9878mm

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Threshold Voltage :

1.8V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

3.1 ns

Height :

1.4986mm

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Package / Case :

8-SOIC (0.154, 3.90mm Width)

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

8.2mOhm

Turn On Delay Time :

6.9 ns

Series :

HEXFET®

Configuration :

SINGLE WITH BUILT-IN DIODE

Length :

4.9784mm

Continuous Drain Current (ID) :

11A

Mounting Type :

Surface Mount

Lead Free :

Contains Lead, Lead Free

ECCN Code :

EAR99

Published :

2005

Number of Elements :

1

Rise Time :

6.2ns

Terminal Position :

Dual

Rds On (Max) @ Id, Vgs :

13.8m Ω @ 11A, 10V

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

10 ns

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Packaging :

Tape and Reel (TR)

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Current Rating :

11A

Power Dissipation :

2.5W

Power Dissipation-Max :

2.5W Ta

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Voltage - Rated DC :

30V

Factory Lead Time :

12 Weeks

Gate to Source Voltage (Vgs) :

20V