IRF7807ZTR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.5W Ta

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Transistor Element Material :

SILICON

Published :

2005

FET Type :

N-Channel

Transistor Application :

SWITCHING

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Surface Mount :

yes

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

11A Ta

RoHS Status :

Non-RoHS Compliant

Vgs (Max) :

±20V

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rds On (Max) @ Id, Vgs :

13.8m Ω @ 11A, 10V

JEDEC-95 Code :

MS-012AA

Vgs(th) (Max) @ Id :

2.25V @ 250μA

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0138Ohm

Drain to Source Voltage (Vdss) :

30V

Series :

HEXFET®

Drain Current-Max (Abs) (ID) :

11A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 15V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G8

DS Breakdown Voltage-Min :

30V

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount