IRF7807ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

11A

Rds On (Max) @ Id, Vgs :

13.8m Ω @ 11A, 10V

JEDEC-95 Code :

MS-012AA

Series :

HEXFET®

DS Breakdown Voltage-Min :

30V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

ECCN Code :

EAR99

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.25V @ 250μA

Drain-source On Resistance-Max :

0.0138Ohm

Surface Mount :

yes

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

Power Dissipation-Max :

2.5W Ta

Vgs (Max) :

±20V

Packaging :

Tube

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Published :

2005

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 15V

Mounting Type :

Surface Mount

Number of Terminations :

8