IRF7807Z

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.0138Ohm

JESD-30 Code :

R-PDSO-G8

Surface Mount :

yes

RoHS Status :

Non-RoHS Compliant

Published :

2005

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

13.8m Ω @ 11A, 10V

Number of Elements :

1

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

11A

Series :

HEXFET®

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

245

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 15V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

11A Ta

Power Dissipation-Max :

2.5W Ta

Terminal Finish :

TIN LEAD

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±20V

Number of Terminations :

8

Vgs(th) (Max) @ Id :

2.25V @ 250μA

DS Breakdown Voltage-Min :

30V

JEDEC-95 Code :

MS-012AA

Packaging :

Tube

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

30V

JESD-609 Code :

e0