IRF7807VTRPBF
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- Mfr.Part #
- IRF7807VTRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.3A 8SO
- Stock
- 17,488
- In Stock ：
- 17,488
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Published :
- 2003
- Current - Continuous Drain (Id) @ 25°C :
- 8.3A Ta
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 8.3A
- Number of Pins :
- 8
- Lead Free :
- Lead Free
- Factory Lead Time :
- 10 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 5V
- Turn On Delay Time :
- 6.3 ns
- Number of Elements :
- 1
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 7A, 4.5V
- Voltage - Rated DC :
- 30V
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 2.2 ns
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Length :
- 4.9784mm
- Rise Time :
- 1.2ns
- Resistance :
- 25mOhm
- Turn-Off Delay Time :
- 11 ns
- Current Rating :
- 8.3A
- Power Dissipation-Max :
- 2.5W Ta
- Vgs (Max) :
- ±20V
- Series :
- HEXFET®
- Power Dissipation :
- 2.5W
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Width :
- 3.9878mm
- Height :
- 1.4986mm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- ECCN Code :
- EAR99
- Datasheets
- IRF7807VTRPBF
N-Channel Tape & Reel (TR) 25m Ω @ 7A, 4.5V ±20V 14nC @ 5V 8-SOIC (0.154, 3.90mm Width)
IRF7807VTRPBF Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.3A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [11 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 6.3 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V).
IRF7807VTRPBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11 ns
IRF7807VTRPBF Applications
There are a lot of Infineon Technologies
IRF7807VTRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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