IRF7807VTRPBF

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Mfr.Part #
IRF7807VTRPBF
Manufacturer
International Rectifier
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
PLANAR <=40V
Stock
40,445
In Stock :
40,445

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Power Dissipation :
2.5W
Series :
HEXFET®
Vgs (Max) :
±20V
Length :
4.9784mm
Vgs(th) (Max) @ Id :
3V @ 250µA
Continuous Drain Current (ID) :
8.3A
Height :
1.4986mm
Drain to Source Breakdown Voltage :
30V
Radiation Hardening :
No
Rise Time :
1.2ns
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
2.5W Ta
Width :
3.9878mm
Voltage - Rated DC :
30V
Gate to Source Voltage (Vgs) :
20V
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 5V
Resistance :
25mOhm
Fall Time (Typ) :
2.2 ns
FET Type :
N-Channel
Number of Elements :
1
Factory Lead Time :
10 Weeks
Packaging :
Tape and Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) :
4.5V
Published :
2003
Turn-Off Delay Time :
11 ns
Current Rating :
8.3A
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Rds On (Max) @ Id, Vgs :
25m Ω @ 7A, 4.5V
Number of Pins :
8
Configuration :
Single
Current - Continuous Drain (Id) @ 25°C :
8.3A Ta
Turn On Delay Time :
6.3 ns
Lead Free :
Lead Free
Datasheets
IRF7807VTRPBF
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRF7807VTRPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-SOIC (0.154, 3.90mm Width), Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Number of Pins:8, IRF7807VTRPBF pinout, IRF7807VTRPBF datasheet PDF, IRF7807VTRPBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRF7807VTRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRF7807VTRPBF


N-Channel Tape & Reel (TR) 25m Ω @ 7A, 4.5V ±20V 14nC @ 5V 8-SOIC (0.154, 3.90mm Width)

IRF7807VTRPBF Overview


Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 8.3A amps.In this device, the drain-source breakdown voltage is 30V and VGS=30V, so the drain-source breakdown voltage is 30V in this case.It is [11 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 6.3 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.A device like this reduces its overall power consumption when it uses drive voltage (4.5V).

IRF7807VTRPBF Features


a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 11 ns


IRF7807VTRPBF Applications


There are a lot of Infineon Technologies
IRF7807VTRPBF applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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