IRF7807VPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Row Spacing :

6.3 mm

Voltage - Rated DC :

30V

Height :

1.4986mm

Nominal Vgs :

3 V

Number of Pins :

8

Width :

3.9878mm

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 4.5V

Lead Free :

Lead Free

Rise Time :

1.2ns

Continuous Drain Current (ID) :

8.3A

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.025Ohm

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Current Rating :

8.3A

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Position :

Dual

Mounting Type :

Surface Mount

Termination :

SMD/SMT

Power Dissipation :

2.5W

Series :

HEXFET®

Radiation Hardening :

No

Dual Supply Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Turn On Delay Time :

6.3 ns

Drain to Source Breakdown Voltage :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Length :

4.9784mm

Power Dissipation-Max :

2.5W Ta

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

FET Type :

N-Channel

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

Mount :

Surface Mount

Number of Elements :

1

Terminal Form :

Gull wing

Published :

2003

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Fall Time (Typ) :

2.2 ns

Vgs (Max) :

±20V

Turn-Off Delay Time :

11 ns

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 5V