IRF7807VD2PBF
- Mfr.Part #
- IRF7807VD2PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.3A 8SO
- Stock
- 22,240
- In Stock :
- 22,240
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Length :
- 4.9784mm
- Radiation Hardening :
- No
- Rise Time :
- 1.2ns
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Turn On Delay Time :
- 6.3 ns
- Rds On (Max) @ Id, Vgs :
- 25mOhm @ 7A, 4.5V
- Nominal Vgs :
- 1 V
- Height :
- 1.4986mm
- Resistance :
- 25mOhm
- Mount :
- Surface Mount
- Threshold Voltage :
- 1V
- Packaging :
- Tube
- Max Operating Temperature :
- 150°C
- Current Rating :
- 8.3A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Current - Continuous Drain (Id) @ 25°C :
- 8.3A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Rds On Max :
- 25 mΩ
- Number of Pins :
- 8
- Continuous Drain Current (ID) :
- 8.3A
- Turn-Off Delay Time :
- 1.1 ns
- Forward Current :
- 3.7A
- Dual Supply Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2.5W
- Drain to Source Voltage (Vdss) :
- 30V
- Termination :
- SMD/SMT
- Drain to Source Breakdown Voltage :
- 30V
- Forward Voltage :
- 540mV
- Min Operating Temperature :
- -55°C
- Power Dissipation-Max :
- 2.5W Ta
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- 8-SO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 2.2 ns
- Series :
- FETKY™
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 25mOhm
- Voltage - Rated DC :
- 30V
- FET Feature :
- Schottky Diode (Isolated)
- Published :
- 2004
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Mounting Type :
- Surface Mount
- Width :
- 3.9878mm
- Datasheets
- IRF7807VD2PBF

N-Channel Tube 25mOhm @ 7A, 4.5V ±20V 14nC @ 4.5V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7807VD2PBF Overview
Its continuous drain current is 8.3A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 1.1 ns.The Drain-to-Source Resistance (DTS) of a MOSFET is 25mOhm when a specific gate-to-source voltage (VGS) is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 6.3 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 1V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V) to reduce its overall power consumption.
IRF7807VD2PBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 1.1 ns
single MOSFETs transistor is 25mOhm
a threshold voltage of 1V
a 30V drain to source voltage (Vdss)
IRF7807VD2PBF Applications
There are a lot of Infineon Technologies
IRF7807VD2PBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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