IRF7807VD1TRPBF
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- Mfr.Part #
- IRF7807VD1TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.3A 8SO
- Stock
- 1,419
- In Stock ：
- 1,419
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Continuous Drain Current (ID) :
- 8.3A
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 7A, 4.5V
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Power Dissipation :
- 1.6W
- Length :
- 4.9784mm
- Packaging :
- Tape and Reel (TR)
- FET Feature :
- Schottky Diode (Isolated)
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- Configuration :
- Single
- Fall Time (Typ) :
- 2.2 ns
- Turn-Off Delay Time :
- 1.1 ns
- Height :
- 1.4986mm
- Lead Free :
- Lead Free
- Published :
- 2004
- Turn On Delay Time :
- 6.3 ns
- Power Dissipation-Max :
- 2.5W Ta
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Series :
- FETKY™
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Resistance :
- 25mOhm
- Width :
- 3.9878mm
- RoHS Status :
- RoHS Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 1.2ns
- Contact Plating :
- Tin
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 8.3A Ta
- Current Rating :
- 8.3A
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- 30V
- Datasheets
- IRF7807VD1TRPBF
N-Channel Tape & Reel (TR) 25m Ω @ 7A, 4.5V ±20V 14nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
IRF7807VD1TRPBF Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8.3A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 1.1 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 6.3 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (4.5V), this device helps reduce its power consumption.
IRF7807VD1TRPBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 1.1 ns
IRF7807VD1TRPBF Applications
There are a lot of Infineon Technologies
IRF7807VD1TRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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