IRF7807VD1PBF
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- Mfr.Part #
- IRF7807VD1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.3A 8SO
- Stock
- 4,104
- In Stock ：
- 4,104
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Feature :
- Schottky Diode (Isolated)
- Operating Temperature :
- -55°C~150°C TJ
- Rise Time :
- 1.2ns
- Series :
- FETKY™
- Drain to Source Breakdown Voltage :
- 30V
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 8.3A
- Length :
- 4.9784mm
- Width :
- 3.9878mm
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 4.5V
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Voltage - Rated DC :
- 30V
- Turn On Delay Time :
- 6.3 ns
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 7A, 4.5V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Published :
- 2004
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 8.3A Ta
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Power Dissipation-Max :
- 2.5W Ta
- REACH SVHC :
- No SVHC
- Current Rating :
- 8.3A
- Mount :
- Surface Mount
- Number of Pins :
- 8
- Turn-Off Delay Time :
- 1.1 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 2.2 ns
- Mounting Type :
- Surface Mount
- Height :
- 1.4986mm
- Resistance :
- 25mOhm
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.6W
- Packaging :
- Tube
- Nominal Vgs :
- 20 V
- FET Type :
- N-Channel
- Datasheets
- IRF7807VD1PBF
N-Channel Tube 25m Ω @ 7A, 4.5V ±20V 14nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
IRF7807VD1PBF Overview
The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 8.3A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 1.1 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6.3 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V), this device helps reduce its overall power consumption.
IRF7807VD1PBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 1.1 ns
IRF7807VD1PBF Applications
There are a lot of Infineon Technologies
IRF7807VD1PBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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