IRF7807TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

1 V

Number of Channels :

1

Current Rating :

13A

Continuous Drain Current (ID) :

8.3A

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Pulsed Drain Current-Max (IDM) :

66A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

25 ns

Length :

4.9784mm

Row Spacing :

6.3 mm

Transistor Application :

SWITCHING

Turn On Delay Time :

12 ns

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 4.5V

Transistor Element Material :

SILICON

Rise Time :

17ns

Power Dissipation-Max :

2.5W Ta

Voltage - Rated DC :

30V

Vgs (Max) :

±12V

Number of Elements :

1

Series :

HEXFET®

Vgs(th) (Max) @ Id :

1V @ 250μA

Gate to Source Voltage (Vgs) :

12V

Number of Pins :

8

Threshold Voltage :

1V

Width :

4.05mm

Number of Terminations :

8

Radiation Hardening :

No

Terminal Form :

Gull wing

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Max Junction Temperature (Tj) :

150°C

Resistance :

25mOhm

REACH SVHC :

No SVHC

Published :

2004

Termination :

SMD/SMT

Dual Supply Voltage :

30V

Power Dissipation :

2.5W

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Height :

1.75mm

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Fall Time (Typ) :

6 ns

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

12 Weeks

Lead Free :

Contains Lead, Lead Free