IRF7807TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

8.3A

Terminal Finish :

MATTE TIN

Series :

HEXFET®

Vgs(th) (Max) @ Id :

1V @ 250μA

Qualification Status :

Not Qualified

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

66A

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.025Ohm

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±12V

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Terminal Form :

Gull wing

Power Dissipation-Max :

2.5W Ta

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 4.5V

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-609 Code :

e3

Number of Terminations :

8

Drive Voltage (Max Rds On,Min Rds On) :

4.5V