IRF7807PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Drain Current-Max (Abs) (ID) :

8.3A

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

30V

Power Dissipation-Max :

2.5W Tc

JEDEC-95 Code :

MS-012AA

Vgs (Max) :

±12V

Transistor Element Material :

SILICON

Terminal Position :

Dual

Operating Temperature (Max) :

150°C

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

yes

Published :

2004

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Package / Case :

8-SOIC (0.154, 3.90mm Width)

JESD-30 Code :

R-PDSO-G8

Series :

HEXFET®

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

25m Ω @ 7A, 4.5V

Pulsed Drain Current-Max (IDM) :

66A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Drain-source On Resistance-Max :

0.025Ohm

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Number of Terminations :

8