IRF7807D2TRPBF
- Mfr.Part #
- IRF7807D2TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.3A 8SO
- Stock
- 19,023
- In Stock :
- 19,023
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 8.3A Ta
- Min Operating Temperature :
- -55°C
- Published :
- 2004
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Max Operating Temperature :
- 150°C
- Voltage - Rated DC :
- 30V
- Height :
- 1.4986mm
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 4.9784mm
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- 8-SO
- Vgs (Max) :
- ±12V
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Drain to Source Resistance :
- 25mOhm
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Power Dissipation-Max :
- 2.5W Ta
- Width :
- 3.9878mm
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.6W
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 5V
- Drain to Source Breakdown Voltage :
- 30V
- Series :
- FETKY™
- Mount :
- Surface Mount
- Current Rating :
- 8.3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 12V
- Continuous Drain Current (ID) :
- 8.3A
- RoHS Status :
- RoHS Compliant
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- Schottky Diode (Isolated)
- Resistance :
- 25mOhm
- Number of Pins :
- 8
- Rds On Max :
- 25 mΩ
- Rds On (Max) @ Id, Vgs :
- 25mOhm @ 7A, 4.5V
- Datasheets
- IRF7807D2TRPBF

N-Channel Tape & Reel (TR) 25mOhm @ 7A, 4.5V ±12V 17nC @ 5V 30V 8-SOIC (0.154, 3.90mm Width)
IRF7807D2TRPBF Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 8.3A.When VGS=30V, and ID flows to VDS at 30VVDS, the drain-source breakdown voltage is 30V in this device.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 25mOhm.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 30V in order to operate.Using drive voltage (4.5V), this device helps reduce its power consumption.
IRF7807D2TRPBF Features
a continuous drain current (ID) of 8.3A
a drain-to-source breakdown voltage of 30V voltage
single MOSFETs transistor is 25mOhm
a 30V drain to source voltage (Vdss)
IRF7807D2TRPBF Applications
There are a lot of Infineon Technologies
IRF7807D2TRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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