IRF7807D2PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Drain to Source Breakdown Voltage :

30V

Rds On Max :

25 mΩ

REACH SVHC :

No SVHC

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

25mOhm @ 7A, 4.5V

Mounting Type :

Surface Mount

Supplier Device Package :

8-SO

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

150°C

Current Rating :

8.3A

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

1V @ 250μA

Continuous Drain Current (ID) :

8.3A

Power Dissipation :

2.5W

Length :

4.9784mm

FET Feature :

Schottky Diode (Isolated)

Nominal Vgs :

1 V

Series :

FETKY™

FET Type :

N-Channel

Min Operating Temperature :

-55°C

Power Dissipation-Max :

2.5W Ta

Drain to Source Resistance :

25mOhm

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 5V

Height :

1.4986mm

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

8.3A Ta

Published :

2004

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Lead Free

Vgs (Max) :

±12V

Voltage - Rated DC :

30V

Width :

3.9878mm

Operating Temperature :

-55°C~150°C TJ