IRF7807D1PBF

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Mfr.Part #
IRF7807D1PBF
Manufacturer
Infineon Technologies
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
MOSFET N-CH 30V 8.3A 8SO
Stock
23,781
In Stock :
23,781

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Series :
FETKY™
Resistance :
25mOhm
Width :
3.9878mm
REACH SVHC :
No SVHC
Current Rating :
8.3A
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
4.5V
Mounting Type :
Surface Mount
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
8.3A Ta
Element Configuration :
Single
Height :
1.4986mm
Rds On (Max) @ Id, Vgs :
25m Ω @ 7A, 4.5V
Voltage - Rated DC :
30V
Forward Voltage :
500mV
Threshold Voltage :
1V
Number of Elements :
1
Power Dissipation :
2.5W
Operating Temperature :
-55°C~150°C TJ
Forward Current :
3.5A
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Packaging :
Tube
FET Type :
N-Channel
Power Dissipation-Max :
2.5W Ta
Gate to Source Voltage (Vgs) :
12V
Vgs(th) (Max) @ Id :
1V @ 250μA
Length :
4.9784mm
Continuous Drain Current (ID) :
8.3A
ECCN Code :
EAR99
Vgs (Max) :
±12V
Dual Supply Voltage :
30V
FET Feature :
Schottky Diode (Isolated)
RoHS Status :
RoHS Compliant
Termination :
SMD/SMT
Drain to Source Breakdown Voltage :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Nominal Vgs :
1 V
Number of Pins :
8
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 5V
Radiation Hardening :
No
Mount :
Surface Mount
Published :
2004
Datasheets
IRF7807D1PBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7807D1PBF from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Number of Pins:8, IRF7807D1PBF pinout, IRF7807D1PBF datasheet PDF, IRF7807D1PBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF7807D1PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF7807D1PBF


N-Channel Tube 25m Ω @ 7A, 4.5V ±12V 17nC @ 5V 8-SOIC (0.154, 3.90mm Width)

IRF7807D1PBF Description

The FETKY? family of Co-Pack HEXFET?MOSFETs and Schottky diodes offers the designer an innovative, board space-saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.



IRF7807D1PBF Features

Co-Pack N-channel HEXFET" Power MOSFET

and Schotly Diode

Ideal for Synchronous Rectifiers in DC-DC

Comforters Up to 5A Output

Low Conduction Losses

Low Switching Losses

Low Vf Schottky Rectifier

Lead-Free


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