IRF7807D1PBF
- Mfr.Part #
- IRF7807D1PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 8.3A 8SO
- Stock
- 23,781
- In Stock :
- 23,781
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- FETKY™
- Resistance :
- 25mOhm
- Width :
- 3.9878mm
- REACH SVHC :
- No SVHC
- Current Rating :
- 8.3A
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 8.3A Ta
- Element Configuration :
- Single
- Height :
- 1.4986mm
- Rds On (Max) @ Id, Vgs :
- 25m Ω @ 7A, 4.5V
- Voltage - Rated DC :
- 30V
- Forward Voltage :
- 500mV
- Threshold Voltage :
- 1V
- Number of Elements :
- 1
- Power Dissipation :
- 2.5W
- Operating Temperature :
- -55°C~150°C TJ
- Forward Current :
- 3.5A
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Packaging :
- Tube
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 2.5W Ta
- Gate to Source Voltage (Vgs) :
- 12V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Length :
- 4.9784mm
- Continuous Drain Current (ID) :
- 8.3A
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±12V
- Dual Supply Voltage :
- 30V
- FET Feature :
- Schottky Diode (Isolated)
- RoHS Status :
- RoHS Compliant
- Termination :
- SMD/SMT
- Drain to Source Breakdown Voltage :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Vgs :
- 1 V
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 5V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Published :
- 2004
- Datasheets
- IRF7807D1PBF

N-Channel Tube 25m Ω @ 7A, 4.5V ±12V 17nC @ 5V 8-SOIC (0.154, 3.90mm Width)
IRF7807D1PBF Description
The FETKY? family of Co-Pack HEXFET?MOSFETs and Schottky diodes offers the designer an innovative, board space-saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications.
IRF7807D1PBF Features
Co-Pack N-channel HEXFET" Power MOSFET
and Schotly Diode
Ideal for Synchronous Rectifiers in DC-DC
Comforters Up to 5A Output
Low Conduction Losses
Low Switching Losses
Low Vf Schottky Rectifier
Lead-Free
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